Structural relaxation and nanoindentation response in Zr-Cu-Ti amorphous thin films
- Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
Ternary Zr-Cu-Ti system, especial with a high Ti content, is normally difficult to be fully vitrified. In this paper, we demonstrate that cosputtering can produce amorphous Zr-Cu-Ti thin films with an excessive Ti content even as high as 19%. Sub-T{sub g} annealing of the film induces the formation of medium-range-ordered clusters and to raise the nanohardness by 35% to 6.6 GPa. The promising mechanical properties of the sub-T{sub g} annealed Zr{sub 52}Cu{sub 29}Ti{sub 19} films offer great potential for microelectromechanical system applications.
- OSTI ID:
- 21175747
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 19; Other Information: DOI: 10.1063/1.2999592; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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