Effects of 2 mass % Si admixture in a laser-produced Fe plasma

Journal Article · Mon Nov 10 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3021362· OSTI ID:21175744

Krasa, Josef; Laska, Leos; Rohlena, Karel; Velyhan, Andriy ^[1]; Lorusso, Antonella; Nassisi, Vincenzo ^[2]; Czarnecka, Agata; Parys, Piotr; Ryc, Leszek; Wolowski, Jerzy ^[3]

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1. Institute of Physics, ASCR, v.v.i., 182 21 Prague 8 (Czech Republic)
2. Department of Physics of Lecce, Laboratorio di Elettronica Applicata e Strumentazione (LEAS), INFN of Lecce, 73100 Lecce (Italy)
3. Institute of Plasma Physics and Laser Microfusion, EURATOM Association, 00-908 Warsaw (Poland)

Emission of multiply charged ions and soft x-rays from the plasmas produced by laser pulses focused on (111) surface of Fe and Fe-2 mass % Si single crystals is investigated for wavelengths of 1064 and 248 nm and intensities up to {approx_equal}1x10{sup 10} W/cm{sup 2}. It is demonstrated that the Si admixture in the Fe plasma results in a higher emission of Fe{sup q+} ions (1{<=}q{<=}4) but in a markedly lower x-ray emission. The relation of wavelengths and pulse durations of laser beams used is figured in the fluence dependence of the ion emission.

• OSTI ID: 21175744
• Journal Information: Applied Physics Letters, Vol. 93, Issue 19; Other Information: DOI: 10.1063/1.3021362; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ION EMISSION
IRON
LASERS
MONOCRYSTALS
PLASMA
PLASMA PRODUCTION
PULSES
SEMICONDUCTOR MATERIALS
SILICON
SOFT X RADIATION
WAVELENGTHS