Influence of reaction with XeF{sub 2} on surface adhesion of Al and Al{sub 2}O{sub 3} surfaces

Journal Article · Mon Oct 06 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2992632· OSTI ID:21175639

Tianfu, Zhang; Park, Jeong Y; Wenyu, Huang; Somorjai, Gabor A ^[1]

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1. Department of Chemistry, University of California, Berkeley, California 94720 (United States) and Materials Science Division and Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

The change in surface adhesion after fluorination of Al and Al{sub 2}O{sub 3} surfaces using XeF{sub 2} was investigated with atomic force microscopy. The chemical interaction between XeF{sub 2} and Al and Al{sub 2}O{sub 3} surfaces was studied by in situ x-ray photoelectron spectroscopy. Fresh Al and Al{sub 2}O{sub 3} surfaces were obtained by etching top silicon layers of Si/Al and Si/Al{sub 2}O{sub 3} with XeF{sub 2}. The surface adhesion and chemical composition were measured after the exposure to air or annealing (at 200 deg. C under vacuum). The correlation between the adhesion force increase and presence of AlF{sub 3} on the surface was revealed.

• OSTI ID: 21175639
• Journal Information: Applied Physics Letters, Vol. 93, Issue 14; Other Information: DOI: 10.1063/1.2992632; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADHESION
AIR
ALUMINIUM
ALUMINIUM FLUORIDES
ALUMINIUM OXIDES
ANNEALING
ATOMIC FORCE MICROSCOPY
CHEMICAL COMPOSITION
ETCHING
FLUORINATION
LAYERS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
X-RAY PHOTOELECTRON SPECTROSCOPY
XENON FLUORIDES