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Title: Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching

Abstract

Inductively coupled plasma (ICP) etching is suitable for producing semiconductor structures with a high aspect ratio. While the morphology of the structures is very satisfactory, less is known about other aspects related to the process, but with potential influence in the optical performance of the devices. We present herein a study of the mechanical stresses produced by the ICP process in the fabrication of ridge waveguides in InP. Stresses purely induced by the process are revealed by the spectral analysis of the cathodoluminescence. A dependence of the stress distribution on the aspect ratio of the waveguides is demonstrated.

Authors:
;  [1];  [2]; ;  [3]
  1. Fisica Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain)
  2. Alcatel-Thales III-V Laboratory, 91128 Palaiseau (France)
  3. Institut des Materiaux Jean-Rouxel, Universite de Nantes-CNRS, 2, rue de la Houssiniere, 44322 Nantes Cedex 3 (France)
Publication Date:
OSTI Identifier:
21175628
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 93; Journal Issue: 13; Other Information: DOI: 10.1063/1.2994691; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ASPECT RATIO; CATHODOLUMINESCENCE; ETCHING; INDIUM PHOSPHIDES; MORPHOLOGY; PLASMA; RESIDUAL STRESSES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SPUTTERING; WAVEGUIDES

Citation Formats

Avella, M, Jimenez, J, Pommereau, F, Landesman, J P, and Rhallabi, A. Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching. United States: N. p., 2008. Web. doi:10.1063/1.2994691.
Avella, M, Jimenez, J, Pommereau, F, Landesman, J P, & Rhallabi, A. Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching. United States. https://doi.org/10.1063/1.2994691
Avella, M, Jimenez, J, Pommereau, F, Landesman, J P, and Rhallabi, A. 2008. "Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching". United States. https://doi.org/10.1063/1.2994691.
@article{osti_21175628,
title = {Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching},
author = {Avella, M and Jimenez, J and Pommereau, F and Landesman, J P and Rhallabi, A},
abstractNote = {Inductively coupled plasma (ICP) etching is suitable for producing semiconductor structures with a high aspect ratio. While the morphology of the structures is very satisfactory, less is known about other aspects related to the process, but with potential influence in the optical performance of the devices. We present herein a study of the mechanical stresses produced by the ICP process in the fabrication of ridge waveguides in InP. Stresses purely induced by the process are revealed by the spectral analysis of the cathodoluminescence. A dependence of the stress distribution on the aspect ratio of the waveguides is demonstrated.},
doi = {10.1063/1.2994691},
url = {https://www.osti.gov/biblio/21175628}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 93,
place = {United States},
year = {Mon Sep 29 00:00:00 EDT 2008},
month = {Mon Sep 29 00:00:00 EDT 2008}
}