Synthesis and photoluminescence properties of aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs

Journal Article · Tue Jul 01 00:00:00 EDT 2008 · Materials Research Bulletin

OSTI ID:21144054

Yong, Su ^[1]; Yiqing, Chen; Sen, Li; Qingtao, Zhou; Xuemei, Liang; Yi, Feng ^[1]

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1. School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009 (China)

Aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs were synthesized on a silicon substrate by a simple thermal evaporation method. The structure and morphology of the as-synthesized nanostructure were characterized using scanning electron microscopy and transmission electron microscopy. The growth of aligned Zn{sub 2}GeO{sub 4} coated ZnO nanorods and Ge doped ZnO nanocombs follows a vapor-solid (VS) process. Photoluminescence properties were also investigated at room temperature. The photoluminescence spectrum reveals the nanostructures have a sharp ultraviolet luminescence peak centered at 382 nm and a broad green luminescence peak centered at about 494 nm.

• OSTI ID: 21144054
• Journal Information: Materials Research Bulletin, Vol. 43, Issue 7; Other Information: DOI: 10.1016/j.materresbull.2007.06.060; PII: S0025-5408(07)00309-1; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRON DIFFRACTION
EVAPORATION
GERMANATES
MORPHOLOGY
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SPECTRA
SYNTHESIS
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
ZINC OXIDES