Sol-gel-derived percolative copper film
Abstract
Cu-SiO{sub 2} films were prepared by the sol-gel method. Two-dimensional fractal copper films were formed after the films were thermally treated in reducing atmosphere. dc resistances of the films decrease 12 orders of magnitude as the content of copper increases from 70 to 80 mol%. During the resistance measurement under argon atmosphere, samples showed a sharp increase or decrease of resistance at a transition temperature which is ascribed to the oxidation of Cu into CuO. The oxidation was also observed in the in situ high temperature X-ray diffraction under vacuum condition. The evolution of the morphology of the films was studied by scanning electron microscopy. As the content of copper increases, the forms of copper particles change from discrete to aggregate then to interconnecting. The coverage coefficients of the copper range from 23 to 55% and the fractal dimensions range from 1.65 to 1.77. The percolation thresholds for the coverage coefficient and the fractal dimension are about 33% and 1.71, respectively, which corresponds to the sample containing 72.5 mol% of Cu.
- Authors:
-
- Department of Physics, National Chung-Hsing University, Taichung 402, Taiwan (China)
- Publication Date:
- OSTI Identifier:
- 21143937
- Resource Type:
- Journal Article
- Journal Name:
- Materials Research Bulletin
- Additional Journal Information:
- Journal Volume: 43; Journal Issue: 10; Other Information: DOI: 10.1016/j.materresbull.2007.10.028; PII: S0025-5408(07)00478-3; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ARGON; ATMOSPHERES; COPPER; COPPER OXIDES; ELECTRICAL PROPERTIES; MORPHOLOGY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON OXIDES; SOL-GEL PROCESS; SURFACE PROPERTIES; THIN FILMS; TRANSITION TEMPERATURE; X-RAY DIFFRACTION
Citation Formats
Szu Sungping, and Cheng, C -L. Sol-gel-derived percolative copper film. United States: N. p., 2008.
Web.
Szu Sungping, & Cheng, C -L. Sol-gel-derived percolative copper film. United States.
Szu Sungping, and Cheng, C -L. 2008.
"Sol-gel-derived percolative copper film". United States.
@article{osti_21143937,
title = {Sol-gel-derived percolative copper film},
author = {Szu Sungping and Cheng, C -L},
abstractNote = {Cu-SiO{sub 2} films were prepared by the sol-gel method. Two-dimensional fractal copper films were formed after the films were thermally treated in reducing atmosphere. dc resistances of the films decrease 12 orders of magnitude as the content of copper increases from 70 to 80 mol%. During the resistance measurement under argon atmosphere, samples showed a sharp increase or decrease of resistance at a transition temperature which is ascribed to the oxidation of Cu into CuO. The oxidation was also observed in the in situ high temperature X-ray diffraction under vacuum condition. The evolution of the morphology of the films was studied by scanning electron microscopy. As the content of copper increases, the forms of copper particles change from discrete to aggregate then to interconnecting. The coverage coefficients of the copper range from 23 to 55% and the fractal dimensions range from 1.65 to 1.77. The percolation thresholds for the coverage coefficient and the fractal dimension are about 33% and 1.71, respectively, which corresponds to the sample containing 72.5 mol% of Cu.},
doi = {},
url = {https://www.osti.gov/biblio/21143937},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 10,
volume = 43,
place = {United States},
year = {Thu Oct 02 00:00:00 EDT 2008},
month = {Thu Oct 02 00:00:00 EDT 2008}
}