Titanium doped silicon layers with very high concentration

Journal Article · Tue Jul 01 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2949258· OSTI ID:21137394

Olea, J; Toledano-Luque, M; Pastor, D; Gonzalez-Diaz, G; Martil, I ^[1]

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1. Dpto. de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, Madrid E-28040 (Spain)

Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10{sup 18} cm{sup -3}. Hall effect measurements show n-type samples with mobility values of about 400 cm{sup 2}/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.

• OSTI ID: 21137394
• Journal Information: Journal of Applied Physics, Vol. 104, Issue 1; Other Information: DOI: 10.1063/1.2949258; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DOPED MATERIALS
HALL EFFECT
ION IMPLANTATION
LAYERS
SEMICONDUCTOR MATERIALS
SILICON
SILICON SOLAR CELLS
TEMPERATURE RANGE 0273-0400 K
TITANIUM
TITANIUM SILICIDES