Real-time studies of gallium adsorption and desorption kinetics on sapphire (0001) by grazing incidence small-angle x-ray scattering and x-ray fluorescence
- Physics Department, Boston University, Boston, Massachusetts 02215 (United States)
- Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States)
Gallium adsorption and desorption on c-plane sapphire has been studied by real-time grazing incidence small-angle x-ray scattering and x-ray fluorescence as a function of substrate temperature (680-740 deg. C) and Ga flux. The x-ray techniques monitor the surface morphology evolution and amount of Ga on the surface. During deposition, nanodroplets of liquid Ga are observed to form on the surface and coarsen. The growth of droplet size during continuous deposition follows dynamical scaling, in agreement with expectations from theory and simulations which include deposition-induced droplet coalescence. However, observation of continued droplet distance scale coarsening during desorption points to the necessity of including further physical processes in the modeling. The desorption rate at different substrate temperatures gives the activation energy of Ga desorption as 2.7 eV, comparable to measured activation energies for desorption from Ga droplets on other substrates and to the Ga heat of vaporization.
- OSTI ID:
- 21137271
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 10; Other Information: DOI: 10.1063/1.2936969; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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