Metamorphic approach to single quantum dot emission at 1.55 {mu}m on GaAs substrate

Journal Article · Thu May 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2927496· OSTI ID:21137268

Semenova, E S; Hostein, R; Patriarche, G; Mauguin, O; Largeau, L; Robert-Philip, I; Beveratos, A; Lemaitre, A ^[1]

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1. Laboratoire de Photonique et de Nanostructures, CNRS, route de Nozay, Marcoussis 91460 (France)

We report on the fabrication and the characterization of InAs quantum dots (QDs) embedded in an indium rich In{sub 0.42}Ga{sub 0.58}As metamorphic matrix grown on a GaAs substrate. Growth conditions were chosen so as to minimize the number of threading dislocations and other defects produced during the plastic relaxation. Sharp and bright lines, originating from the emission of a few isolated single quantum dots, were observed in microphotoluminescence around 1.55 {mu}m at 5 K. They exhibit, in particular, a characteristic exciton/biexciton behavior. These QDs could offer an interesting alternative to other approaches as InAs/InP QDs for the realization of single photon emitters at telecom wavelengths.

• OSTI ID: 21137268
• Journal Information: Journal of Applied Physics, Vol. 103, Issue 10; Other Information: DOI: 10.1063/1.2927496; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DISLOCATIONS
EXCITONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PHOTOLUMINESCENCE
PHOTONS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES