Electronic and atomic structures of Ti{sub 1-x}Al{sub x}N thin films related to their damage behavior
- Laboratoire de Mecanique, Materiaux et Procedes de Fabrication, Universite de Haute Alsace, 61 rue Albert Camus, F-68093 Mulhouse cedex (France)
- Institut FEMTO-ST (UMR CNRS 6174), Universite de Franche-Comte, BP 71427, F-25211 Montbeliard cedex (France)
- CNRS--UR1 SOLEIL, F-91192 Gif sur Yvette cedex (France)
Ti and Al K-edge x-ray absorption spectroscopy is used to investigate the electronic structure of Ti{sub 1-x}Al{sub x}N thin films deposited by reactive magnetron sputtering. The experimental near edge spectra of TiN and AlN are interpreted in the light of unoccupied density of state band structure calculations. The comparison of the structural parameters derived from x-ray absorption fine structure and x-ray diffraction reveals segregation between Al-rich and Ti-rich domains within the Ti{sub 1-x}Al{sub x}N films. Whereas x-ray diffraction probes only the crystallized domains, the structural information derived from extended x-ray absorption fine structure analysis turns on both crystalline and grain boundaries. The results are discussed by considering the damage behavior of the films depending on the composition.
- OSTI ID:
- 21137156
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 8; Other Information: DOI: 10.1063/1.2907415; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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