Characterization of the donor-acceptor-pair transition in Nitrogen-implanted zinc oxide

Journal Article · Tue Apr 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2906320· OSTI ID:21137154

Stichtenoth, D; Duerr, J ^[1]; Ronning, C ^[2]; Wischmeier, L; Voss, T ^[3]

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1. II. Institute of Physics, University of Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)
2. Institute for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena (Germany)
3. Institute for Solid State Physics, University of Bremen, P.O. Box 330 440, 28334 Bremen (Germany)

Zinc oxide bulk crystals were doped with nitrogen by ion beam implantation. After postimplantation annealing, a luminescent transition appears at 3.230 eV. Power-dependent photoluminescence studies and time-resolved measurements at several spectral positions within this band can be described by a model for donor-acceptor-pair (DAP) transitions. By tracing the luminescence in a temperature-dependent study, a connection to phonon replicas could be excluded. Based on these results, this luminescence line could be clearly assigned to a DAP transition. In order to increase the doping efficiency, various approaches are considered and discussed. A slight increase could be obtained by high-temperature implantation without postimplantation annealing.

• OSTI ID: 21137154
• Journal Information: Journal of Applied Physics, Vol. 103, Issue 8; Other Information: DOI: 10.1063/1.2906320; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTALS
DOPED MATERIALS
ION BEAMS
ION IMPLANTATION
NITROGEN
PHONONS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TIME RESOLUTION
ZINC OXIDES