Role of Strontium in Oxide Epitaxy on Silicon (001)

Journal Article · Fri Sep 05 00:00:00 EDT 2008 · Physical Review Letters

DOI:https://doi.org/10.1103/PHYSREVLETT.101.105503· OSTI ID:21134199

Reiner, J W; Walker, F J ^[1]; Garrity, K F ^[2]; Ismail-Beigi, S; Ahn, C H ^[1]

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1. Department of Applied Physics, Yale University, New Haven, Connecticut 06520-8284 (United States)
2. Department of Physics, Yale University, New Haven, Connecticut 06520-8120 (United States)

Epitaxial oxide-Si heterostructures, which integrate the functionality of crystalline oxides with Si technology, are made possible by a submonolayer of Sr deposited on Si (001). We find by electron diffraction studies using single termination Si wafers that this Sr submonolayer replaces the top layer of Si when deposited at 650 deg. C. Supported by first-principles calculations, we propose a model for the reaction dynamics of Sr on the Si surface and its effect on oxide epitaxy. This model predicts, and we experimentally confirm, an unexplored 25 deg. C pathway to crystalline oxide epitaxy on Si.

• OSTI ID: 21134199
• Journal Information: Physical Review Letters, Vol. 101, Issue 10; Other Information: DOI: 10.1103/PhysRevLett.101.105503; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON DIFFRACTION
EPITAXY
LAYERS
OXIDES
SILICON
STRONTIUM
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K