Domain Walls in Gapped Graphene

Semenoff, G W; Semenoff, V; Fei, Zhou

doi:10.1103/PHYSREVLETT.101.087204

Title: Domain Walls in Gapped Graphene

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Abstract

The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support midgap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the midgap band is partially filled, the domain wall can behave like a one-dimensional metal embedded in a semiconductor and could potentially be used as a single-channel quantum wire.

Authors:

Semenoff, G W; Semenoff, V; Fei, Zhou ^[1]

Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, British Columbia V6T 1Z1 (Canada)

Publication Date:: Fri Aug 22 00:00:00 EDT 2008

OSTI Identifier:: 21134162

Resource Type:: Journal Article

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 101; Journal Issue: 8; Other Information: DOI: 10.1103/PhysRevLett.101.087204; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0031-9007

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; METALS; ONE-DIMENSIONAL CALCULATIONS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; WALLS

Citation Formats


                    Semenoff, G W, Semenoff, V, and Fei, Zhou. Domain Walls in Gapped Graphene.  United States: N. p., 2008. 
        Web.  doi:10.1103/PHYSREVLETT.101.087204.

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                    Semenoff, G W, Semenoff, V, & Fei, Zhou. Domain Walls in Gapped Graphene.  United States.  https://doi.org/10.1103/PHYSREVLETT.101.087204

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                    Semenoff, G W, Semenoff, V, and Fei, Zhou. 2008.  
        "Domain Walls in Gapped Graphene".  United States.  https://doi.org/10.1103/PHYSREVLETT.101.087204.

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@article{osti_21134162,

  title        = {Domain Walls in Gapped Graphene},

  author       = {Semenoff, G W and Semenoff, V and Fei, Zhou},

  abstractNote = {The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support midgap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the midgap band is partially filled, the domain wall can behave like a one-dimensional metal embedded in a semiconductor and could potentially be used as a single-channel quantum wire.},

  doi          = {10.1103/PHYSREVLETT.101.087204},

  url          = {https://www.osti.gov/biblio/21134162},
  journal      = {Physical Review Letters},

  issn         = {0031-9007},

  number       = 8,

  volume       = 101,

  place        = {United States},

  year         = {Fri Aug 22 00:00:00 EDT 2008},

  month        = {Fri Aug 22 00:00:00 EDT 2008}

}

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