Room temperature photoluminescence at 4.5 {mu}m from InAsN

Journal Article · Sat Mar 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2896638· OSTI ID:21133996

Zhuang, Q; Godenir, A M. R.; Krier, A ^[1]; Lai, K T; Haywood, S K ^[2]

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1. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
2. Department of Engineering, University of Hull, Hull HU6 7RX (United Kingdom)

Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 {mu}m is obtained.

• OSTI ID: 21133996
• Journal Information: Journal of Applied Physics, Vol. 103, Issue 6; Other Information: DOI: 10.1063/1.2896638; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
ARSENIC COMPOUNDS
CHARGE CARRIERS
CRYSTAL GROWTH
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NITROGEN
PHOTOLUMINESCENCE
RADIOWAVE RADIATION
RECOMBINATION
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K