Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

Journal Article · Sat Mar 01 00:00:00 EST 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2874480· OSTI ID:21133981

Martinez-Pastor, J ^[1]; Fuster, D; Abellan, M; Anguita, J; Sochinskii, N V ^[2]

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1. Instituto de Ciencia de los Materials, Universidad de Valencia, P.O. Box 22085, 46071 Valencia (Spain)
2. Instituto de Microelectronica de Madrid, Isaac Newton 8, Tres Cantos, 28760 Madrid (Spain)

We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.

• OSTI ID: 21133981
• Journal Information: Journal of Applied Physics, Vol. 103, Issue 5; Other Information: DOI: 10.1063/1.2874480; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
CHEMICAL VAPOR DEPOSITION
ETCHING
IMPURITIES
ION BEAMS
LAYERS
MORPHOLOGICAL CHANGES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
RECOMBINATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
VAPOR PHASE EPITAXY