Ultrafast crystallization and thermal stability of In-Ge doped eutectic Sb{sub 70}Te{sub 30} phase change material
- Data Storage Institute, Agency of Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
Effect of In and Ge doping in the form of In{sub 2}Ge{sub 8}Sb{sub 85}Te{sub 5} on optical and thermal properties of eutectic Sb{sub 70}Te{sub 30} alloys was investigated. Crystalline structure of In{sub 2}Ge{sub 8}Sb{sub 85}Te{sub 5} phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isothermal reflectivity-time measurement shows a growth-dominated crystallization mechanism. Ultrafast crystallization speed of 30 ns is realized upon irradiation by blue laser beam. The use of ultrafast and thermally stable In{sub 2}Ge{sub 8}Sb{sub 85}Te{sub 5} phase change material as mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability.
- OSTI ID:
- 21133945
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 4; Other Information: DOI: 10.1063/1.2841724; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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