Spatially selected synthesis of LaF{sub 3} and Er{sup 3+}-doped CaF{sub 2} crystals in oxyfluoride glasses by laser-induced crystallization
- Department of Materials Science and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188 (Japan)
Oxyfluoride glasses with a small amount of NiO are prepared using a conventional melt quenching technique, and the spatially selected crystallization of LaF{sub 3} and CaF{sub 2} crystals is induced on the glass surface by irradiations of continuous wave lasers with a wavelength of {lambda}=1064 or 1080 nm. Dots and lines including LaF{sub 3} crystals are patterned by heat-assisted (300 deg. C) laser irradiations ({lambda}=1064 nm) with a power of P=1 W and an irradiation time of 10 s for dots and a scanning speed of S=5 {mu}m/s for lines. Lines consisting of CaF{sub 2} crystals are also patterned in an ErF{sub 3}-doped oxyfluoride glass by laser irradiations ({lambda}=1080 nm) with a power of P=1.7 W and a scanning speed of S=2 {mu}m/s, and the incorporation of Er{sup 3+} ions into CaF{sub 2} crystals is confirmed from micro-photoluminescence spectrum measurements. It is proposed that the lines patterned by laser irradiations in this study are consisted of the composite of LaF{sub 3} or CaF{sub 2} nanocrystals and SiO{sub 2}-based oxide glassy phase. It is demonstrated that a combination of Ni{sup 2+}-dopings and laser irradiations is effective in spatially selected local crystallizations of fluorides in oxyfluoride glasses. - Graphical abstract: This figure shows the polarization optical and confocal scanning laser micrographs for lines obtained by laser irradiations with a laser power of P=1.7 W and a scanning speed of S=2 {mu}m/s in an oxyfluoride glass. It is proposed that the line consists of the composite of CaF{sub 2} nanocrystals and oxide glassy phase. This is the first demonstration on the patterning of fluoride crystals in glass by laser irradiations.
- OSTI ID:
- 21128296
- Journal Information:
- Journal of Solid State Chemistry, Vol. 181, Issue 5; Other Information: DOI: 10.1016/j.jssc.2008.02.026; PII: S0022-4596(08)00115-1; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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