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Title: Microstructural evolution in H ion induced splitting of freestanding GaN

Abstract

We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1-2 nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450 deg. C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475 deg. C. Extended internal surfaces develop around 550 deg. C leading to the exfoliation of GaN thin layer.

Authors:
; ; ;  [1]; ;  [2]; ;  [3]
  1. Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle (Germany)
  2. Departement de Physique, Universite de Montreal, Succursale Centre Ville, Montreal, Quebec, H3T 1J4 (Canada)
  3. Department of Physics, Martin-Luther-University Halle-Wittenberg, Friedemann-Bach-Platz 6, D 06108 Halle (Germany)
Publication Date:
OSTI Identifier:
21123992
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 93; Journal Issue: 3; Other Information: DOI: 10.1063/1.2955832; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNIHILATION; BUBBLES; CHANNELING; CRYSTALS; GALLIUM NITRIDES; HYDROGEN IONS; ION IMPLANTATION; MICROSTRUCTURE; POSITRONS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES

Citation Formats

Moutanabbir, O, Scholz, R, Senz, S, Goesele, U, Chicoine, M, Schiettekatte, F, Suesskraut, F, and Krause-Rehberg, R. Microstructural evolution in H ion induced splitting of freestanding GaN. United States: N. p., 2008. Web. doi:10.1063/1.2955832.
Moutanabbir, O, Scholz, R, Senz, S, Goesele, U, Chicoine, M, Schiettekatte, F, Suesskraut, F, & Krause-Rehberg, R. Microstructural evolution in H ion induced splitting of freestanding GaN. United States. https://doi.org/10.1063/1.2955832
Moutanabbir, O, Scholz, R, Senz, S, Goesele, U, Chicoine, M, Schiettekatte, F, Suesskraut, F, and Krause-Rehberg, R. 2008. "Microstructural evolution in H ion induced splitting of freestanding GaN". United States. https://doi.org/10.1063/1.2955832.
@article{osti_21123992,
title = {Microstructural evolution in H ion induced splitting of freestanding GaN},
author = {Moutanabbir, O and Scholz, R and Senz, S and Goesele, U and Chicoine, M and Schiettekatte, F and Suesskraut, F and Krause-Rehberg, R},
abstractNote = {We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1-2 nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450 deg. C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475 deg. C. Extended internal surfaces develop around 550 deg. C leading to the exfoliation of GaN thin layer.},
doi = {10.1063/1.2955832},
url = {https://www.osti.gov/biblio/21123992}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 93,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2008},
month = {Mon Jul 21 00:00:00 EDT 2008}
}