Room temperature Si {delta}-growth on Ge incorporating high-K dielectric for metal oxide semiconductor applications

Journal Article · Mon Jul 14 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2957476· OSTI ID:21123978

Hong, Augustin J; Ogawa, Masaaki; Wang, Kang L ^[1]; Yong, Wang; Jin, Zou ^[2]; Zheng, Xu; Yang, Yang ^[3]

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1. Department of Electrical Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)
2. School of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, St Lucia, Queensland 4072 (Australia)
3. Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)

A low temperature Al{sub 2}O{sub 3}/4 monolayer amorphous Si gate stack process was demonstrated on p-type Ge wafers using atomic layer deposition and molecular beam epitaxy. Multifrequency capacitance-voltage (C-V) and current-voltage (I-V) characteristics showed excellent electrical properties of the Pt/Al{sub 2}O{sub 3}/4 ML Si/Ge metal oxide semiconductor capacitor. No kinks from 1 MHz to 4 kHz and a leakage current density of 2.6x10{sup -6} A/cm{sup 2} at 1 V with an equivalent oxide thickness of 2.5 nm. The interface characterization using a conductance method showed that interface trap density at the near midgap was 8x10{sup 12} eV{sup -1} cm{sup -2} and a mean capture cross section of holes was extracted to be 10{sup -16} cm{sup 2}.

• OSTI ID: 21123978
• Journal Information: Applied Physics Letters, Vol. 93, Issue 2; Other Information: DOI: 10.1063/1.2957476; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CAPACITANCE
CAPACITORS
CROSS SECTIONS
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
INTERFACES
KHZ RANGE 100-1000
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K