Ion sources for energy extremes of ion implantation (invited)
- Brookhaven National Laboratory, Upton, New York 11973 (United States)
For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P{sup 2+} [8.6 pmA (particle milliampere)], P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+}Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.
- OSTI ID:
- 21123700
- Journal Information:
- Review of Scientific Instruments, Vol. 79, Issue 2; Conference: ICIS 2007: 12. international conference on ion sources, Jeju (Korea, Republic of), 26-31 Aug 2007; Other Information: DOI: 10.1063/1.2801648; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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