Effects of hydrogen on the optical properties of ZnCdO/ZnO quantum wells grown by molecular beam epitaxy

Journal Article · Mon Jun 30 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2953178· OSTI ID:21120834

Buyanova, I A; Wang, X J; Chen, W M ^[1]; Pozina, G; Lim, W; Norton, D P; Pearton, S J ^[2]; Osinsky, A; Dong, J W; Hertog, B ^[3]

---

1. Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden)
2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
3. SVT Associates, Eden Prairie, Minnesota 55344 (United States)

Temperature-dependent cw- and time-resolved photoluminescence (PL), as well as optically detected magnetic resonance (ODMR) measurements are employed to evaluate effects of deuterium (2H) doping on optical properties of ZnCdO/ZnO quantum well structures grown by molecular beam epitaxy. It is shown that incorporation of {sup 2}H from a remote plasma causes a substantial improvement in radiative efficiency of the investigated structures. Based on transient PL measurements, the observed improvements are attributed to efficient passivation by hydrogen of competing nonradiative recombination centers via defects. This conclusion is confirmed from the ODMR studies.

• OSTI ID: 21120834
• Journal Information: Applied Physics Letters, Vol. 92, Issue 26; Other Information: DOI: 10.1063/1.2953178; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM OXIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEUTERIUM
HYDROGEN
MAGNETIC RESONANCE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PASSIVATION
PHOTOLUMINESCENCE
PLASMA
QUANTUM WELLS
RECOMBINATION
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TIME RESOLUTION
ZINC OXIDES