High crystalline-quality III-V layer transfer onto Si substrate

Journal Article · Mon Mar 03 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2890494· OSTI ID:21120596

Peng, Chen; Yi, Jing; Lau, S S ^[1]; Dapeng, Xu; Mawst, Luke ^[2]; Alford, T L ^[3]; Paulson, Charles; Kuech, T F ^[4]

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1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
2. Electrical and Computer Engineering Department, University of Wisconsin, Madison, Wisconsin 53706 (United States)
3. School of Materials, Arizona State University, Tempe, Arizona 85287-8706 (United States)
4. Department of Chemical and Biological Engineering, University of Wisconsin, Madison, Wisconsin 53706 (United States)

In this study, an approach combining ion cutting and selective chemical etch for the transfer of high crystalline-quality III-V layers on SiO{sub 2}/Si substrate has been investigated. This layer transfer scheme takes advantage of the ion-cutting process by conserving III-V substrates for reuse and simultaneously improving the transferred layer quality and surface condition without using chemical and mechanical polishing. The relocation of the ion-implantation damage maximum enables the transfer of relatively defect-free InP-based layers onto a Si substrate coated with an oxide layer and results in structures ready for further optoelectronic device fabrication or epitaxial growth.

• OSTI ID: 21120596
• Journal Information: Applied Physics Letters, Vol. 92, Issue 9; Other Information: DOI: 10.1063/1.2890494; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CUTTING
EPITAXY
ETCHING
INDIUM PHOSPHIDES
ION IMPLANTATION
LAYERS
MECHANICAL POLISHING
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SUBSTRATES
THIN FILMS