Ferromagnetic GaMnAs grown on (110) faced GaAs
- Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, 93040 Regensburg (Germany)
Thin Ga{sub 0.94}Mn{sub 0.06}As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [-110] oriented GaAs cleaved edges. The Curie temperatures T{sub C} for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures T{sub C} increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference device magnetometry and magnetotransport measurements are reported.
- OSTI ID:
- 21120579
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 10; Other Information: DOI: 10.1063/1.2884683; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation
Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface
Evolution of magnetic anisotropy and spin-reorientation transition in Fe films grown on GaAs(113)A substrates by molecular-beam epitaxy
Journal Article
·
Fri Mar 15 00:00:00 EDT 2024
· Nanoscale
·
OSTI ID:21120579
+5 more
Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface
Journal Article
·
Mon May 01 00:00:00 EDT 2006
· Journal of Applied Physics
·
OSTI ID:21120579
+2 more
Evolution of magnetic anisotropy and spin-reorientation transition in Fe films grown on GaAs(113)A substrates by molecular-beam epitaxy
Journal Article
·
Wed Jun 15 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:21120579
+1 more