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Title: rf-driven ion sources for industrial applications (invited) (abstract)

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.2838065· OSTI ID:21103979
 [1]
  1. Lawrence Berkeley National Laboratory and Nuclear Engineering Department, University of California, Berkeley, California 94720 (United States)

The Plasma and Ion Source Technology Group at the Lawrence Berkeley National Laboratory have been developing rf-driven ion sources for the last two decades. These sources are being used to generate both positive and negative ion beams. Some of these sources are operating in particle accelerators such as the Spallation Neutron Source (SNS) at Oak Ridge, while others are being employed in various industrial ion beam systems. There are four areas where the rf-driven ion sources are commonly used in industry. (1) In semiconductor manufacturing, rf-driven sources have found important applications in plasma etching, ion beam implantation, and ion beam lithography. (2) In material analysis and surface modification, miniature rf-ion sources can be found in focused ion beam systems. They can provide ion beams of essentially any element in the Periodic Table. The newly developed combined rf ion-electron beam unit improves greatly the performance of the secondary ion mass spectrometry tool. (3) For neutron production, rf ion source is a major component of compact, high flux D-D, D-T, or T-T neutron generators. These neutron sources are now being employed in boron neutron capture therapy (BNCT) as well as in neutron imaging and material interrogation. (4) Large area rf-driven ion source will be used in an industrial design neutral beam diagnostic system for probing fusion plasmas. Such sources can be easily scaled to provide large ion beam current for future fusion reactor applications.

OSTI ID:
21103979
Journal Information:
Review of Scientific Instruments, Vol. 79, Issue 2; Conference: ICIS 2007: 12. international conference on ion sources, Jeju (Korea, Republic of), 26-31 Aug 2007; Other Information: DOI: 10.1063/1.2838065; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
Country of Publication:
United States
Language:
English