Degradation of InGaN/GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings

Journal Article · Mon Apr 14 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2908919· OSTI ID:21101985

Rossetti, M; Smeeton, T M; Tan, W -S; Kauer, M; Hooper, S E; Heffernan, J ^[1]; Xiu, H; Humphreys, C J ^[2]

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1. Sharp Laboratories of Europe Ltd., Edmund Halley Road, Oxford Science Park, Oxford OX4 4GB (United Kingdom)
2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

The degradation of InGaN/GaN laser diodes grown by molecular beam epitaxy is analyzed by using surface mapping of the photoluminescence emission on a micrometric scale, which allows the identification of failure regions. This, combined with the mapping of the electroluminescence, suggests two different mechanisms for laser degradation. Increased nonradiative recombination at specific sites along the crystal directions associated with the presence of dislocations lying in the basal plane near the active region is one of these. We also observe an increase in current injection nonuniformities with increasing aging time.

• OSTI ID: 21101985
• Journal Information: Applied Physics Letters, Vol. 92, Issue 15; Other Information: DOI: 10.1063/1.2908919; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AGING
CRYSTAL GROWTH
CRYSTALS
DISLOCATIONS
ELECTROLUMINESCENCE
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RECOMBINATION
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS