Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells
- Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)
The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.
- OSTI ID:
- 21101980
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 14; Other Information: DOI: 10.1063/1.2907508; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells
Optimum indium composition for (Ga,In)(N,As)/GaAs quantum wells emitting beyond 1.5 {mu}m