Electrical properties and photoluminescence of SiO{sub x} layers with Si nanocrystals in relation to the SiO{sub x} composition
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)
- Hebrew University, Racah Institute of Physics (Israel)
The photoluminescence and electrical properties are compared for silicon-oxide layers containing Si nanocrystals and having different Si content. The oxide was deposited by co-sputtering of silicon dioxide and silicon with the subsequent annealing for the formation of nanocrystals. Excess Si content in the layer varies along the sample from 6 to 74 vol %. It is found that a charge magnitude determined from the flat-band voltage has a pronounced peak for the excess Si content of about 26%, the largest charge correlating with the highest photoluminescence intensity. The further increase in the excess Si content in oxide leads to a decrease in both the oxide charge and the photoluminescence intensity and to the appearance of percolation conductivity.
- OSTI ID:
- 21088662
- Journal Information:
- Semiconductors, Vol. 40, Issue 10; Other Information: DOI: 10.1134/S1063782606100137; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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