Bistability and electrical activity of the vacancy-dioxygen complex in silicon
- National Academy of Sciences of Belarus, Joint Institute of Solid State and Semiconductor Physics (Belarus)
- Polish Academy of Sciences, Institute of Physics (Poland)
The methods of infrared absorption. Hall effect, and deep-level transient spectroscopy are used to study the complexes that consist of a vacancy and two oxygen atoms (the vacancy-dioxygen complexes, VO{sub 2}) in irradiated n-Si crystals with various levels of doping. The previously observed bistability of VO{sub 2} is confirmed and evidence is provided for electrical activity of this defect in the metastable configuration VO*{sub 2}. It is established that the defect with this configuration features an acceptor level located at E{sub C} - 0.06 eV. It is shown that the absorption bands at 967 and 1023 cm{sup -1} are caused by the negatively charged VO*{sub 2} state, while the bands peaking at 928 and 1004 cm{sup -1} correspond to the neutral charge state of the defect.
- OSTI ID:
- 21088643
- Journal Information:
- Semiconductors, Vol. 40, Issue 11; Other Information: DOI: 10.1134/S1063782606110066; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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