Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases

Journal Article · Fri Dec 15 00:00:00 EST 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606120128· OSTI ID:21088622

Balyuba, V I; Gritsyk, V Yu; Davydova, T A; Nazarov, S S ^[1]; Panin, A V ^[2]; Khludkova, L S ^[1]

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1. Kuznetsov Physicotechnical Institute (Russian Federation)
2. Russian Academy of Sciences, Institute of Strength Physics and Materials Science, Siberian Division (Russian Federation)

We study the effect of thermal annealing in the range of 200-610 deg. C on the sensitivity and time dependences of the response of the Pd-SiO{sub 2}-n-Si diodes to hydrogen and ammonia. The postannealing surface of a Pd electrode was examined using atomic force microscopy. The high-frequency C-V characteristics were measured in air and gas mixtures H{sub 2}-air and NH{sub 3}-air. It is shown that, after annealing at 200 deg. C for 10 min, the response of diode capacitance to hydrogen is higher than that to ammonia. After annealing at 300 deg. C and higher, the sensitivity of MOS diodes to hydrogen nearly vanishes. The response to ammonia still remains high, although it gradually weakens as the annealing temperature is increased. A decrease in sensitivity of the Pd-SiO{sub 2}-n-Si diodes to ammonia with increasing temperature is attributed to worsening of the electrical characteristics of the Pd electrode.

• OSTI ID: 21088622
• Journal Information: Semiconductors, Vol. 40, Issue 12; Other Information: DOI: 10.1134/S1063782606120128; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
ANNEALING
ATOMIC FORCE MICROSCOPY
ELECTRODES
HYDROGEN
PALLADIUM
SENSITIVITY
SILICON
SILICON OXIDES
SURFACES
TEMPERATURE RANGE 0400-1000 K
TIME DEPENDENCE