Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

Journal Article · Mon May 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606050022· OSTI ID:21088551

Voronina, T I; Lagunova, T S; Mikhailova, M P; Lipaev, A F; Yakovlev, Yu P ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000-60000 cm{sup 2}/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2-200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 x 10{sup 18} cm{sup -3}; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.

• OSTI ID: 21088551
• Journal Information: Semiconductors, Vol. 40, Issue 5; Other Information: DOI: 10.1134/S1063782606050022; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY ALLOYS
ARSENIC ALLOYS
CHARGE CARRIERS
DOPED MATERIALS
ELECTRONS
ENERGY SPECTRA
EXCHANGE INTERACTIONS
GALLIUM ALLOYS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
HALL EFFECT
HETEROJUNCTIONS
INDIUM ALLOYS
INDIUM ARSENIDES
MAGNETORESISTANCE
MANGANESE IONS
MOBILITY
QUATERNARY ALLOY SYSTEMS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K