Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys

Journal Article · Mon May 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606050046· OSTI ID:21088549

Toropov, A I; Bakarov, A K; Zhuravlev, K S ^[1]; Kobitski, A Yu; Wagner, H P; Zahn, D R. T. ^[2]

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1. Institute of Semiconductor Physics (Russian Federation)
2. Institut fuer Physik, TU Chemnitz (Germany)

The stationary and time-resolved polariton radiation in ultrahigh quality AIGaAs layers have been studied. It has been found that elastic exciton-exciton collisions lead to the appearance of a low-energy line of polariton radiation. We show that the rate of exciton-to-polariton transitions caused by elastic exciton-exciton collisions is determined not only by the density of the excitonic gas, but also by its temperature; this is in accordance with existing theoretical predictions.

• OSTI ID: 21088549
• Journal Information: Semiconductors, Vol. 40, Issue 5; Other Information: DOI: 10.1134/S1063782606050046; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
COLLISIONS
EXCITONS
GALLIUM ARSENIDES
LAYERS
SEMICONDUCTOR MATERIALS
TIME RESOLUTION