Effect of irradiation with reactor neutrons and the temperature of subsequent heat treatment on the structure of InP single crystals
- Unitary Federal State Enterprise Karpov Institute of Physical Chemistry, Obninsk Branch (Russian Federation)
- Moscow State Institute of Steel and Alloys (Technological University) (Russian Federation)
The results of studying the features of the effect of irradiation with fast and full-spectrum reactor neutrons and subsequent heat treatments on the structural characteristics of InP single crystals are reported. It is shown that, in contrast to other III-V semiconductor compounds, the lattice constant decreases in InP as a result of irradiation with neutrons. Fast neutrons make the major contribution to the variation in the lattice constant. The presence of the component of thermal neutrons that give rise to Sn atoms in the material does not bring about any appreciable variation in the lattice constant. Heat treatment of irradiated samples at temperatures as high as 600 deg. C leads to annealing of radiation defects and recovery of the lattice constant; in the samples irradiated with high neutron fluences, the lattice constant becomes even larger than that before irradiation. An analysis of the obtained experimental data made it possible to assume that the decrease in the InP lattice constant as a result of irradiation with neutrons is mainly caused by the introduction of the P{sub In} antisite defects that give rise to an effect similar to that of vacancy-related defects.
- OSTI ID:
- 21088537
- Journal Information:
- Semiconductors, Vol. 40, Issue 6; Other Information: DOI: 10.1134/S1063782606060017; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Observation of Fe-related defects in neutron irradiated semi-insulating InP
The effect of neutron irradiation and annealing temperature on the electrical properties and lattice constant of epitaxial gallium nitride layers