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Title: The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

Abstract

A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at the interphase boundary on the side of a-Si; the thickness of this layer is governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions are analyzed in the context of the model. It shown that, in the case of high doses of implantation of rare-earth ions, it is necessary to take into account the formation of R{sub m} clusters (m = 4), where R denotes the atom of a rare-earth element, whereas, if oxygen ions are also implanted, formation of the complexes RO{sub n} (n = 3-6) should be taken into account; these complexes affect the transition-layer thickness and segregation coefficient.

Authors:
 [1]
  1. St. Petersburg State Electrotechnical University (LETI) (Russian Federation), E-mail: Aleksandrov@svs.ru
Publication Date:
OSTI Identifier:
21088499
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 40; Journal Issue: 8; Other Information: DOI: 10.1134/S1063782606080021; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALLIZATION; DIFFUSION LENGTH; EPITAXY; ERBIUM; ERBIUM COMPLEXES; IMPURITIES; ION IMPLANTATION; LAYERS; OXYGEN; OXYGEN IONS; RADIATION DOSES; SEGREGATION; SILICON; VACANCIES

Citation Formats

Aleksandrov, O. V. The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation. United States: N. p., 2006. Web. doi:10.1134/S1063782606080021.
Aleksandrov, O. V. The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation. United States. https://doi.org/10.1134/S1063782606080021
Aleksandrov, O. V. 2006. "The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation". United States. https://doi.org/10.1134/S1063782606080021.
@article{osti_21088499,
title = {The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation},
author = {Aleksandrov, O. V.},
abstractNote = {A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at the interphase boundary on the side of a-Si; the thickness of this layer is governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions are analyzed in the context of the model. It shown that, in the case of high doses of implantation of rare-earth ions, it is necessary to take into account the formation of R{sub m} clusters (m = 4), where R denotes the atom of a rare-earth element, whereas, if oxygen ions are also implanted, formation of the complexes RO{sub n} (n = 3-6) should be taken into account; these complexes affect the transition-layer thickness and segregation coefficient.},
doi = {10.1134/S1063782606080021},
url = {https://www.osti.gov/biblio/21088499}, journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 40,
place = {United States},
year = {Tue Aug 15 00:00:00 EDT 2006},
month = {Tue Aug 15 00:00:00 EDT 2006}
}