Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

Journal Article · Fri Sep 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606090132· OSTI ID:21088478

Klad'ko, V P; Chornen'kii, S V; Komarov, A V ^[1]; Tacano, M ^[2]; Sveshnikov, Yu N ^[3]; Vitusevich, S A; Belyaev, A E ^[4]

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1. National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)
2. AMRC, Meisei University (Japan)
3. ZAO Elma-Malakhit (Russian Federation)
4. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

Overall characterization of the GaN and AlGaN/GaN epitaxial layers by X-ray diffractometry and optical spectral analysis is carried out. The layers are grown by metalloorganic gas-phase epitaxy on (0001)-oriented single crystal sapphire wafers. The components of strains and the density of dislocations are determined. The effects of strains and dislocations on the photoluminescence intensity and spectra are studied. The results allow better understanding of the nature and mechanisms of the formation of defects in the epitaxial AlGaN/GaN heterostructures.

• OSTI ID: 21088478
• Journal Information: Semiconductors, Vol. 40, Issue 9; Other Information: DOI: 10.1134/S1063782606090132; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
EPITAXY
GALLIUM NITRIDES
INTERFACES
LAYERS
MONOCRYSTALS
PHOTOLUMINESCENCE
SPECTRA
STRAINS
X-RAY DIFFRACTION