EBIC study of resistive photosensitive elements based on HgCdTe
- Russian Academy of Sciences, Institute for Microelectronics Technology and High-Purity Materials (Russian Federation)
- Moscow Plant Sapfir (Russian Federation)
Photosensitive resistive elements based on HgCdTe with decreased photosensitivity as a result of prolonged operation are studied by the method of electron-beam-induced current in a scanning electron microscope. It is shown that the degradation processes in these elements are related to the appearance of regions with a lowered sensitivity in the vicinity of contacts. Distribution of the induced current for these inhomogeneous elements was simulated. It is shown that a comparison of the measured and calculated distributions of the induced-current signal makes it possible to reveal the most probable causes of the inhomogeneous decrease in the photosensitivity. The comparison performed showed that the most likely cause of a decrease in the photosensitivity of the elements under study was an increase in the donor concentration in the near-contact regions.
- OSTI ID:
- 21088434
- Journal Information:
- Semiconductors, Vol. 41, Issue 2; Other Information: DOI: 10.1134/S1063782607020236; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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