Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals

Journal Article · Sat Mar 15 00:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1007/S11453-008-3006-5· OSTI ID:21087915

Zobov, M E; Gabibov, F S; Kamilov, I K ^[1]; Manyakhin, F I; Naimi, E K ^[2]

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1. Russian Academy of Sciences, Institute of Physics, Dagestan Scientific Center (Russian Federation)
2. Moscow Institute of Steel and Alloys (Technological University) (Russian Federation)

The results of the effect of ultrasonic treatment of ZnSe crystals on the structure of the energy spectrum of electronic states of centers with deep levels forming photoelectric and luminescent properties of this compound are presented. It is for the first time proved experimentally that the climb of edge dislocations under the effect of ultrasound leads to regrouping and generation of defects forming deep levels, which manifest themselves in phenomena of photosensitivity and radiative recombination.

• OSTI ID: 21087915
• Journal Information: Semiconductors, Vol. 42, Issue 3; Other Information: DOI: 10.1007/s11453-008-3006-5; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
EDGE DISLOCATIONS
ENERGY SPECTRA
LUMINESCENCE
PHOTOSENSITIVITY
ZINC SELENIDES