Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures

Journal Article · Thu May 15 00:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608050096· OSTI ID:21087877

Maksimov, A A; Tartakovskii, I I ^[1]; Yakovlev, D R ^[2]; Waag, A ^[3]

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1. Institute of Solid State Physics (Russian Federation)
2. University of Dortmund, Experimentelle Physik II (Germany)
3. Braunschweig Technical University, Institute of Semiconductor Technology (Germany)

In is shown that, at high densities of spatially separated electrons and holes in type-II ZnSe/BeTe heterostructures, the conditions for resonance tunneling of photoexcited holes from the ZnSe layer to the BeTe layer are attainable. Nonlinear behavior of the intensity of the photoluminescence band corresponding to spatially direct optical transitions with photoexcitation intensity is observed. Numerical calculations are carried out, and the results are in good agreement with the experimental data in a wide region of variation of the optical pumping intensity.

• OSTI ID: 21087877
• Journal Information: Semiconductors, Vol. 42, Issue 5; Other Information: DOI: 10.1134/S1063782608050096; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BERYLLIUM ALLOYS
BERYLLIUM TELLURIDES
CHARGE CARRIERS
ELECTRONS
LAYERS
OPTICAL PUMPING
PHOTOLUMINESCENCE
RESONANCE
SELENIUM ALLOYS
TELLURIUM ALLOYS
TUNNEL EFFECT
ZINC ALLOYS
ZINC SELENIDES