Etching characteristics of LiNbO{sub 3} in reactive ion etching and inductively coupled plasma
- Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1UB (United Kingdom)
- Interface Analysis Centre, University of Bristol, Bristol BS2 8BS (United Kingdom)
- Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom)
The etching characteristics of congruent LiNbO{sub 3} single crystals including doped LiNbO{sub 3} and proton-changed LiNbO{sub 3} have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO{sub 3} have been fabricated and optically measured.
- OSTI ID:
- 21064541
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 3; Other Information: DOI: 10.1063/1.2838180; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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