Pairwise cobalt doping of boron carbides with cobaltocene

Journal Article · Mon Oct 15 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2799053· OSTI ID:21064402

Ignatov, A Yu; Losovyj, Ya B; Carlson, L; LaGraffe, D; Brand, J I; Dowben, P A ^[1]

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1. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, Louisiana 70806 (United States)

We have performed Co K-edge x-ray absorption fine structure and x-ray absorption near edge structure measurements of Co-doped plasma enhanced chemical vapor phase deposition (PECVD) grown 'C{sub 2}B{sub 10}H{sub x}' semiconducting boron carbides, using cobaltocene. Cobalt does not dope PECVD grown boron carbides as a random fragment of the cobaltocene source gas. The Co atoms are fivefold boron coordinated (R=2.10{+-}0.02 A) and are chemically bonded to the icosahedral cages of B{sub 10}CH{sub x} or B{sub 9}C{sub 2}H{sub y}. Pairwise Co doping occurs, with the cobalt atoms favoring sites some 5.28{+-}0.02 A apart.

• OSTI ID: 21064402
• Journal Information: Journal of Applied Physics, Vol. 102, Issue 8; Other Information: DOI: 10.1063/1.2799053; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
BORON CARBIDES
CHEMICAL VAPOR DEPOSITION
COBALT
CRYSTAL GROWTH
DOPED MATERIALS
FINE STRUCTURE
ORGANOMETALLIC COMPOUNDS
SEMICONDUCTOR MATERIALS
VAPORS
X-RAY SPECTROSCOPY