Interaction of alpha radiation with thermally-induced defects in silicon

Journal Article · Tue Jan 15 00:00:00 EST 2008 · Materials Characterization

DOI:https://doi.org/10.1016/j.matchar.2007.02.006· OSTI ID:21062188

Ali, Akbar ^[1]; Majid, Abdul ^[1]

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1. Advance Materials Physics Lab. Department of Physics, Quaid-i-Azam University, Islamabad (Pakistan)

The interaction of radiation-induced defects created by energetic alpha particles and thermally-induced defects in silicon has been studied using a Deep Level Transient Spectroscopy (DLTS) technique. Two thermally-induced defects at energy positions E{sub c}-0.48 eV and E{sub c}-0.25 eV and three radiation-induced defects E2, E3 and E5 have been observed. The concentration of both of the thermally-induced defects has been observed to increase on irradiation. It has been noted that production rates of the radiation-induced defects are suppressed in the presence of thermally-induced defects. A significant difference in annealing characteristics of thermally-induced defects in the presence of radiation-induced defects has been observed compared to the characteristics measured in pre-irradiated samples.

• OSTI ID: 21062188
• Journal Information: Materials Characterization, Vol. 59, Issue 1; Other Information: DOI: 10.1016/j.matchar.2007.02.006; PII: S1044-5803(07)00082-4; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALPHA PARTICLES
ANNEALING
DEEP LEVEL TRANSIENT SPECTROSCOPY
INTERACTIONS
MILLI EV RANGE
PHYSICAL RADIATION EFFECTS
SILICON