Single crystalline BaTiO{sub 3} thin films synthesized using ion implantation induced layer transfer
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125 (United States)
Layer transfer of BaTiO{sub 3} thin films onto silicon-based substrates has been investigated. Hydrogen and helium ions were co-implanted to facilitate ion-implantation-induced layer transfer of films from BaTiO{sub 3} single crystals. From thermodynamic equilibrium calculations, we suggest that the dominant species during cavity nucleation and growth are H{sub 2}, H{sup +}, H{sub 2}O, Ba{sup 2+} and Ba-OH, and that the addition of hydrogen to the Ba-Ti-O system can effectively suppress volatile oxide formation during layer transfer and subsequent annealing. After ion implantation, BaTiO{sub 3} layers contain microstructural defects and hydrogen precipitates in the lattice, but after layer transfer, the single crystal is found to be stoichiometric. Using direct wafer bonding and layer splitting, single crystal BaTiO{sub 3} thin films were transferred onto amorphous Si{sub 3}N{sub 4} and Pt substrates. Micro-Raman spectroscopy indicated that the density of defects generated by ion implantation in BaTiO{sub 3} can be significantly reduced during post-transfer annealing, returning the transferred layer to its single crystal state. Characterization using piezoresponse force microscopy shows that the layer transferred thin films are ferroelectric, with domain structures and piezoresponse characteristics similar to that of bulk crystals.
- OSTI ID:
- 21062132
- Journal Information:
- Journal of Applied Physics, Vol. 102, Issue 7; Other Information: DOI: 10.1063/1.2786915; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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