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Title: Characteristics of altered layers formed by sputtering with a massive molecular ion containing diverse elements with large mass differences

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2786906· OSTI ID:21062119
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  1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki-ken 305-8568 (Japan)

Tetrairidium dodecacarbonyl (Ir{sub 4}(CO){sub 12}) is an organometallic compound called metal cluster complex which has a molecular weight of 1104.9. To investigate its irradiation effect, silicon substrates sputtered with 10 keV Ir{sub 4}(CO){sub 7}{sup +} were analyzed by high resolution Rutherford backscattering spectrometry. Experimental results were examined on the basis of a conventional theory of simultaneous implantation and sputtering. The introduction of oxygen gas during sputtering proved to form a thick oxide layer in the substrate, resulting in iridium segregation at the silicon-oxide interface and carbon accumulation near the surface. It was confirmed that oxygen partial pressure significantly affected the characteristics of an altered layer beneath a sputtered surface.

OSTI ID:
21062119
Journal Information:
Journal of Applied Physics, Vol. 102, Issue 7; Other Information: DOI: 10.1063/1.2786906; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English