Semiconducting properties of zinc-doped cubic boron nitride thin films
Abstract
We have examined the electronic properties of zinc-doped cubic boron nitride (cBN) thin films prepared by sputter deposition. The electric conductivity of films deposited in pure Ar increased as the concentration of zinc dopant increased, and hole conduction was identified by the measurement of thermoelectric currents. It was also found that the conductivity increment in such films was accompanied by a linear increase in the B/(B+N) ratio. At the same time, no modification of the composition and the conductivity by incorporated zinc was observed when film growth took place in presence of nitrogen gas. The effect of the excess boron on the conductivity emerged only when films show semi-insulating behavior. These results suggest that Zn substitution for nitrogen causes high electric conductivity of cBN. The electric contact between Ti electrode and semiconducting cBN was examined by the transfer length method, and Ohmic conduction was observed in the Ti/cBN contact. The specific contact resistance was affected by the specific resistance of cBN films, and it was reduced from 10{sup 5} to 100 {omega} cm{sup 2} by increasing the concentration of incorporated Zn.
- Authors:
-
- Department of Materials Engineering, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
- Publication Date:
- OSTI Identifier:
- 21062096
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 102; Journal Issue: 6; Other Information: DOI: 10.1063/1.2783983; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BORON; BORON NITRIDES; CRYSTAL GROWTH; CUBIC LATTICES; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRODES; HOLES; NITROGEN; SEMICONDUCTOR MATERIALS; SPUTTERING; THERMOELECTRICITY; THIN FILMS; TITANIUM; ZINC
Citation Formats
Nose, K, and Yoshida, T. Semiconducting properties of zinc-doped cubic boron nitride thin films. United States: N. p., 2007.
Web. doi:10.1063/1.2783983.
Nose, K, & Yoshida, T. Semiconducting properties of zinc-doped cubic boron nitride thin films. United States. https://doi.org/10.1063/1.2783983
Nose, K, and Yoshida, T. 2007.
"Semiconducting properties of zinc-doped cubic boron nitride thin films". United States. https://doi.org/10.1063/1.2783983.
@article{osti_21062096,
title = {Semiconducting properties of zinc-doped cubic boron nitride thin films},
author = {Nose, K and Yoshida, T},
abstractNote = {We have examined the electronic properties of zinc-doped cubic boron nitride (cBN) thin films prepared by sputter deposition. The electric conductivity of films deposited in pure Ar increased as the concentration of zinc dopant increased, and hole conduction was identified by the measurement of thermoelectric currents. It was also found that the conductivity increment in such films was accompanied by a linear increase in the B/(B+N) ratio. At the same time, no modification of the composition and the conductivity by incorporated zinc was observed when film growth took place in presence of nitrogen gas. The effect of the excess boron on the conductivity emerged only when films show semi-insulating behavior. These results suggest that Zn substitution for nitrogen causes high electric conductivity of cBN. The electric contact between Ti electrode and semiconducting cBN was examined by the transfer length method, and Ohmic conduction was observed in the Ti/cBN contact. The specific contact resistance was affected by the specific resistance of cBN films, and it was reduced from 10{sup 5} to 100 {omega} cm{sup 2} by increasing the concentration of incorporated Zn.},
doi = {10.1063/1.2783983},
url = {https://www.osti.gov/biblio/21062096},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 102,
place = {United States},
year = {Sat Sep 15 00:00:00 EDT 2007},
month = {Sat Sep 15 00:00:00 EDT 2007}
}