Determination of Mass Attenuation Coefficients for CuInSe2 and CuGaSe2 Semiconductors

Journal Article · Mon Apr 23 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2733090· OSTI ID:21057111

Celik, Ahmet; Cevik, Ugur; Baltas, Hasan; Bacaksiz, Emin ^[1]

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1. Department of Physics, Faculty of Arts and Sciences, Karadeniz Technical University, 61080 Trabzon (Turkey)

This work presents mass attenuation coefficients values of CuInSe2 and CuGaSe2 semiconductor thin films commonly used in photovoltaic devices. The mass attenuation coefficients were measured at different energies from 11.9 to 37.3 keV by using the secondary excitation method. Monochromatic photons were obtained using the Br, Sr, Mo, Cd, Te, Ba and Nd secondary targets. 59.5 keV gamma rays emitted from an annular Am-241 radioactive source were used to excite secondary targets. Characteristic X-rays emitted from secondary target were counted by a Si(Li) detector with a resolution of 0.16 keV at 5.9 keV. The measured values were compared with theoretical values calculated using WinXCOM program.

• OSTI ID: 21057111
• Journal Information: AIP Conference Proceedings, Vol. 899, Issue 1; Conference: 6. international conference of the Balkan Physical Union, Istanbul (Turkey), 22-26 Aug 2006; Other Information: DOI: 10.1063/1.2733090; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMERICIUM 241
ATTENUATION
COMPARATIVE EVALUATIONS
COPPER COMPOUNDS
EXCITATION
GALLIUM SELENIDES
GAMMA RADIATION
INDIUM SELENIDES
KEV RANGE
LI-DRIFTED SI DETECTORS
MASS
MONOCHROMATIC RADIATION
PHOTON EMISSION
PHOTONS
PHOTOVOLTAIC EFFECT
RESOLUTION
SEMICONDUCTOR MATERIALS
THIN FILMS
X RADIATION