Metal free growth and characterization of InAs1-xPx nanowires

Journal Article · Tue Apr 10 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2729788· OSTI ID:21055073

Mandl, Bernhard ^[1]; Stangl, Julian; Brehm, Moritz; Fromherz, Thomas; Bauer, Guenther ^[1]; Maartensson, Thomas; Samuelson, Lars; Seifert, Werner ^[2]

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1. Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitaet Linz, Altenbergerstr. 69, A-4040 Linz (Austria)
2. Solid State Physics, Lund University, Box 118, S-221 00, Lund (Sweden)

InAs nanowires have been grown without the use of Au or other metal particles as catalyst by metal-organic vapor phase epitaxy. The nanowires growth is initiated by a thin layer of SiOx. The wires exhibit a non-tapered shape with a hexagonal cross section. In addition to InAs also InAs1-xPx wires are grown and the incorporation of P is studied by photoluminescence.

• OSTI ID: 21055073
• Journal Information: AIP Conference Proceedings, Vol. 893, Issue 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729788; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATALYSIS
CATALYSTS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
INDIUM ARSENIDES
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOTOLUMINESCENCE
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
THIN FILMS
VAPOR PHASE EPITAXY