TEM and HRXRD Analysis of LP MOVPE Grown InGaP/GaAs epilayers

Journal Article · Tue Apr 10 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2729754· OSTI ID:21055051

Pelosi, Claudio; Bosi, Matteo; Attolini, Giovanni; Germini, Fabrizio; Frigeri, Cesare ^[1]; Prutskij, Tatiana ^[2]

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1. CNR-IMEM Institute, Parco Area delle Scienze 37a, Loc Fontanini 43010 Parma (Italy)
2. Instituto de Ciencias, BUAP, Privada 17 Norte, no. 3417, colSanMiguel Hueyotlipan, 72050 Puebla, Pue. (Mexico)

The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.

• OSTI ID: 21055051
• Journal Information: AIP Conference Proceedings, Vol. 893, Issue 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729754; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DIFFUSION
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
LAYERS
RESOLUTION
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION