Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates
Abstract
In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.
- Authors:
-
- Physics Department, Centro de Investigacion y de Estudios Avanzados del IPN, Apartado Postal 14-740, Mexico D.F., 07000 (Mexico)
- Universidad Nacional de Colombia - Sede Manizales, A. A. 127 (Colombia)
- Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Av. Karakorum 1470, Lomas 4a Seccion, C.P. 78210, San Luis Potosi (Mexico)
- Publication Date:
- OSTI Identifier:
- 21054786
- Resource Type:
- Journal Article
- Journal Name:
- AIP Conference Proceedings
- Additional Journal Information:
- Journal Volume: 885; Journal Issue: 1; Conference: EAV06: Advanced summer school in physics 2006: Frontiers in contemporary physics, Mexico City (Mexico), 10-14 Jul 2006; Other Information: DOI: 10.1063/1.2563199; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CRYSTAL GROWTH; DENSITY; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES
Citation Formats
Cruz Hernandez, Esteban, Rojas Ramirez, Juan-Salvador, Contreras Hernandez, Rocio, Lopez Lopez, Maximo, Pulzara Mora, Alvaro, and Mendez Garcia, Victor H. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates. United States: N. p., 2007.
Web. doi:10.1063/1.2563199.
Cruz Hernandez, Esteban, Rojas Ramirez, Juan-Salvador, Contreras Hernandez, Rocio, Lopez Lopez, Maximo, Pulzara Mora, Alvaro, & Mendez Garcia, Victor H. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates. United States. https://doi.org/10.1063/1.2563199
Cruz Hernandez, Esteban, Rojas Ramirez, Juan-Salvador, Contreras Hernandez, Rocio, Lopez Lopez, Maximo, Pulzara Mora, Alvaro, and Mendez Garcia, Victor H. 2007.
"Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates". United States. https://doi.org/10.1063/1.2563199.
@article{osti_21054786,
title = {Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates},
author = {Cruz Hernandez, Esteban and Rojas Ramirez, Juan-Salvador and Contreras Hernandez, Rocio and Lopez Lopez, Maximo and Pulzara Mora, Alvaro and Mendez Garcia, Victor H},
abstractNote = {In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.},
doi = {10.1063/1.2563199},
url = {https://www.osti.gov/biblio/21054786},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 885,
place = {United States},
year = {Fri Feb 09 00:00:00 EST 2007},
month = {Fri Feb 09 00:00:00 EST 2007}
}
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