Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects

Journal Article · Mon Oct 15 00:00:00 EDT 2007 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.76.153201· OSTI ID:21052724

Marques, Luis A; Pelaz, Lourdes; Lopez, Pedro; Santos, Ivan; Aboy, Maria ^[1]

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1. Departamento de Electronica, Universidad de Valladolid, E.T.S.I. de Telecomunicacion, 47011 Valladolid (Spain)

We use classical molecular dynamics simulation techniques to study the regrowth behavior of amorphous pockets in Si. We demonstrate that crystallization depends on the morphology of the pocket-crystal interface. Although our simulated amorphous pockets had not any excess nor deficit of atoms with respect to perfect crystal, after regrowth we found residual defects. Most of them are single Si interstitials and vacancies, but also larger defects have been encountered. We have determined their atomic structures and calculated their formation energies. These complexes are more stable than amorphous pockets, and may trigger the formation of extended defects or favor damage accumulation.

• OSTI ID: 21052724
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 76, Issue 15; Other Information: DOI: 10.1103/PhysRevB.76.153201; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPLEXES
CRYSTALLIZATION
CRYSTALS
DEFECTS
FORMATION HEAT
INTERFACES
INTERSTITIALS
MOLECULAR DYNAMICS METHOD
MORPHOLOGY
RECRYSTALLIZATION
SEMICONDUCTOR MATERIALS
SILICON
SIMULATION
VACANCIES