Stacked Fresnel Zone Plates for High Energy X-rays
- ESRF, B.P. 220, 6 rue Jules Horowitz, 38043 Grenoble (France)
- Russian Research Centre Kurchatov Institute, 123182 Moscow (Russian Federation)
- Institute of Microelectronics Technology RAS, 142432 Chernogolovka, Moscow region (Russian Federation)
A stacking technique was developed in order to increase focusing efficiency of Fresnel zone plates (FZP) at high energies. Two identical Si chips each of which containing 9 FZPs were used for stacking. Alignment of the chips was achieved by on-line observation of the moire pattern. The formation of moire patterns was studied theoretically and experimentally at different experimental conditions. To provide the desired stability Si-chips were bonded together with slow solidification speed epoxy glue. A technique of angular alignment in order to compensate a linear displacement in the process of gluing was proposed. Two sets of stacked FZPs were experimentally tested to focus 15 and 50 keV x rays. The gain in the efficiency by factor 2.5 was demonstrated at 15 keV. The focal spot of 1.8 {mu}m vertically and 14 {mu}m horizontally with 35% efficiency was measured at 50 keV. Forecast for the stacking of nanofocusing FZPs was discussed.
- OSTI ID:
- 21052690
- Journal Information:
- AIP Conference Proceedings, Vol. 879, Issue 1; Conference: 9. international conference on synchrotron radiation instrumentation, Daegu (Korea, Republic of), 28 May - 2 Jun 2006; Other Information: DOI: 10.1063/1.2436230; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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