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Title: Time-Resolved X-Ray Triple-Crystal Diffractometry Probing Dynamic Strain in Semiconductors

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2436293· OSTI ID:21049253
 [1]; ; ;  [2]; ;  [3]
  1. Interdisciplinary Graduate School of Engineering Sciences, Kyushu Univ., Kasuga, Fukuoka 816-8580 (Japan)
  2. RIKEN SPring-8 Center, Sayo-cho Sayo-gun, Hyogo 679-5148 (Japan)
  3. Research Institute for Applied Mechanics, Kyushu Univ., Kasuga, Fukuoka 816-8580 (Japan)

Intense synchrotron radiation sources have enabled us to combine time-resolved measurements and triple-crystal diffractometry. The time-resolved triple-crystal diffractometry (TRTCD) determines the time-dependent dilational and shear components of deformation tensor, separately. The TRTCD experiments have been performed at a long undulator beamline of SPring-8. The time-resolved measurement system using pump-probe technique and a fast multi-channel scaler covers a full range of milliseconds with a time-resolution of several tens of picoseconds. The TRTCD with wide time range was applied to the dynamic strain measurement for semiconductor wafers irradiated by a femtosecond pulse laser. We observed a dilational component of acoustic echo pulses to analyze the time-varying pulse shape due to propagation. The lattice motion in the successively induced flexural standing wave has also been observed through a shear component.

OSTI ID:
21049253
Journal Information:
AIP Conference Proceedings, Vol. 879, Issue 1; Conference: 9. international conference on synchrotron radiation instrumentation, Daegu (Korea, Republic of), 28 May - 2 Jun 2006; Other Information: DOI: 10.1063/1.2436293; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English